Hacks of Electronics
MOSFET Full Form is Metal Oxide Semiconductor Field Effect Transistor. Here we will be discussing MOSFET VI Characteristics, symbol and its classification. They are broadly classified into two types namely enhancement Type and depletion type MOSFET. In an enhancement type MOSFET channel has to be induced for the device to conduct, which is achieved by […]
Gunn diode operates on the Gunn effect which is named after its inventor J.B. Gunn. He discovered the periodic variation of current in a GaAs (gallium arsenide) rod in 1963. The microwave device that operates on the principle of transfer of electrons is called as Gunn diode. This is one of the diodes used as […]
The VI characteristics of IGBT is as shown in Figure. In the forward direction, they are similar to those of bipolar transistors. The only difference here is that the controlling parameter is the gate to source voltage Vgs and the parameter being controlled is the drain current. The working principle of IGBT is based on […]
An Insulated Gate Bipolar Transistor in short IGBT is a three-terminal semiconductor device it is a hybrid of MOSFET and BJT for high efficiency and fast switching. The power BJT has the advantage of low on state power dissipation, but it cannot be switched at faster rates due to longer turn-off time, whereas MOSFETs have […]
The full form of TRIAC is Triode for Alternating Current. Let’s discuss working of Triac with vi characteristics and Applications. A Triac is a bidirectional device it allows current to flow in both the directions. It is also known as a bidirectional triode thyristor or bilateral triode thyristor. In the SCR family, after the SCR, […]
The SCR has only two states of operation i.e. it can be either fully ON or completely OFF hence SCR can as a switch. There is no “active” region of operation like a transistor.