Hacks of Electronics
An Insulated Gate Bipolar Transistor in short IGBT is a three-terminal semiconductor device it is a hybrid of MOSFET and BJT for high efficiency and fast switching. The power BJT has the advantage of low on state power dissipation, but it cannot be switched at faster rates due to longer turn-off time, whereas MOSFETs have […]
The full form of TRIAC is Triode for Alternating Current. Let’s discuss working of Triac with vi characteristics and Applications. A Triac is a bidirectional device it allows current to flow in both the directions. It is also known as a bidirectional triode thyristor or bilateral triode thyristor. In the SCR family, after the SCR, […]
The diac is basically a two-terminal device. Here we will discuss the Symbol of Diac and it’s VI characteristics. It is such a combination of semiconductor layers that allows triggering in both directions. The diac is used as a triggering device for the TRIAC circuits. Here we will discuss the Symbol of Diac and it’s […]
The SCR has only two states of operation i.e. it can be either fully ON or completely OFF hence SCR can as a switch. There is no “active” region of operation like a transistor.
The VI characteristics of SCR (silicon-controlled rectifier) is a graph of anode current Ia on the y-axis and anode to cathode voltage on the x-axis as shown in the graph. It describes the relationship between the voltage across the device and the current flowing through it. The characteristics in the reverse direction (anode to cathode […]
Silicon Controlled Rectifier (SCR) is one of the oldest four-layer solid-state power device it was invented in 1957. SCR has the highest power handling capacity in comparison with other semiconductor devices. It has three terminals namely anode, cathode, and gate