how igbt is superior to mosfet and bjt

Electronic devices Electronics tutorial IGBT

VI Characteristics of IGBT and it’s Working Principle

The VI characteristics of IGBT is as shown in Figure. In the forward direction, they are similar to those of bipolar transistors. The only difference here is that the controlling parameter is the gate to source voltage Vgs and the parameter being controlled is the drain current. The working principle of IGBT is based on […]

IGBT Symbol, Working, VI Characteristics and Applications

Active components Electronic devices Electronics tutorial IGBT

IGBT Full Form, Symbol, Construction, Working and Applications

An Insulated Gate Bipolar Transistor in short IGBT is a three-terminal semiconductor device it is a hybrid of MOSFET and BJT for high efficiency and fast switching. The power BJT has the advantage of low on state power dissipation, but it cannot be switched at faster rates due to longer turn-off time, whereas MOSFETs have […]