Hacks of Electronics
The VI characteristics of IGBT is as shown in Figure. In the forward direction, they are similar to those of bipolar transistors. The only difference here is that the controlling parameter is the gate to source voltage Vgs and the parameter being controlled is the drain current. The working principle of IGBT is based on […]
An Insulated Gate Bipolar Transistor in short IGBT is a three-terminal semiconductor device it is a hybrid of MOSFET and BJT for high efficiency and fast switching. The power BJT has the advantage of low on state power dissipation, but it cannot be switched at faster rates due to longer turn-off time, whereas MOSFETs have […]
The full form of TRIAC is Triode for Alternating Current. Let’s discuss working of Triac with vi characteristics and Applications. A Triac is a bidirectional device it allows current to flow in both the directions. It is also known as a bidirectional triode thyristor or bilateral triode thyristor. In the SCR family, after the SCR, […]
The Diac is basically a two-terminal device. Here we will discuss the symbol, construction, VI characteristics, advantages, disadvantages and applications of Diac. It is such a combination of semiconductor layers that allows triggering in both directions. The Diac is used as a triggering device for the TRIAC circuits. What is a DIAC? A DIAC (Diode […]
The SCR has only two states of operation i.e. it can be either fully ON or completely OFF hence SCR can as a switch. There is no “active” region of operation like a transistor.
Silicon Controlled Rectifier (SCR) is one of the oldest four-layer solid-state power device it was invented in 1957. SCR has the highest power handling capacity in comparison with other semiconductor devices. It has three terminals namely anode, cathode, and gate