The VI characteristics of IGBT is as shown in Figure. In the forward direction, they are similar to those of bipolar transistors. The only difference… Read More »VI Characteristics of IGBT and it’s Working Principle
An Insulated Gate Bipolar Transistor in short IGBT is a three-terminal semiconductor device it is a hybrid of MOSFET and BJT for high efficiency and… Read More »IGBT Full Form, Symbol, Construction, Working and Applications
The full form of TRIAC is Triode for Alternating Current. Let’s discuss working of Triac with vi characteristics and Applications. A Triac is a bidirectional… Read More »TRIAC Full Form, Symbol, Working, VI Characteristic & Application
The Diac is basically a two-terminal device. Here we will discuss the symbol, construction, VI characteristics, advantages, disadvantages and applications of Diac. It is such… Read More »Diac Symbol, Construction, VI Characteristics and Applications
The SCR has only two states of operation i.e. it can be either fully ON or completely OFF hence SCR can as a switch. There is no “active” region of operation like a transistor.
Silicon Controlled Rectifier (SCR) is one of the oldest four-layer solid-state power device it was invented in 1957. SCR has the highest power handling capacity in comparison with other semiconductor devices. It has three terminals namely anode, cathode, and gate